| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| 2SJ479 2SJ479L 2SJ479S |
Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3290 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ575 |
Silicon P Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
| 2SK3348 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3349 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3378 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
